The TOSHIBA TLP781 consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage(AC: 5kVRMS (min)).
• TLP781 : 7.62mm pitch type DIP4
• TLP781F : 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002
Approved no.8961
BS EN60950-1:2006
Approved no.8962
• SEMKO approved:EN60065:2002
Approved no.800514
EN60950-1:2001, EN60335-1:2002
Approved no.800517
• Option(D4)type
VDE approved : DIN EN60747-5-2
Certificate No. 40021173
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
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