The FT-CNY64 and FT-CNY65 series contains an infrared emitting diode optically coupled to a phototransistor. These devices are packaged in an 4-pin DIP package and providing a distance between input and output for highest safety requirement of >3mm.
Features
• High Voltage BVCEO=80V(min.)
• Operating temperature up to +85°C
• High isolation voltage between input and output Viso = 8000 Vrms
• Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 200
• Thickness through insulation ≧3mm
• Pb free and RoHS compliant
Other Applications
• Switch mode power supply
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation)
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.