The FT-452-G contains an infrared emitting diode, optically coupled to a high voltage darlington phototransistor. It is packaged in a 4-pin small outline SMD package.
Features
● High collect-Emitter voltage (VCEO = 350V)
● Current transfer ratio (CTR: Min. 1000% at IF =1mA VCE =2V)
● High isolation voltage between input and output (Viso=3750 V rms )
● Pb free and RoHS compliant.
Other Applications
● Low power logic circuits
● Telecommunications equipment
● Portable electronics
● Interfacing coupling systems of different potentials and impedances
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.