DESCRIPTION
The MOC8100, TIL111 and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
仙童 FAIRCHILD
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
DESCRIPTION
The MOC8100, TIL111 and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
DESCRIPTION
The MOC8100, TIL111 and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
DESCRIPTION
The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
DESCRIPTION
The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
DESCRIPTION
The MOC3051-M and MOC3052-M consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing silicon bilateral AC switch (triac).
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
DESCRIPTION
The MOC3051-M and MOC3052-M consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing silicon bilateral AC switch (triac).
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Description
The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Description
The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Description
The 6N137, HCPL-2601/2611 single-channel and HCPL-2630/2631 dual-channel optocouplers consist of a 850 nm AlGaAS LED, optically coupled to a very high speed integrated photodetector logic gate with a strobable output.
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
Description
The 6N137, HCPL-2601/2611 single-channel and HCPL-2630/2631 dual-channel optocouplers consist of a 850 nm AlGaAS LED, optically coupled to a very high speed integrated photodetector logic gate with a strobable output.