DESCRIPTION
The SFH601 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package.
It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
The coupling device is designed for signal transmission between two electrically separated circuits.
FEATURES
• Isolation test voltage, 5000 VRMS
• Low coupling capacitance
• High common mode transient immunity
• Storage temperature, -55 ° to +150 °C
APPLICATIONS
• Telecom
• Industrial controls
• Battery powered equipment
• Office machines
• Programmable controllers
AGENCY APPROVALS
• UL
• cUL
• DIN EN 60747-5-5 (VDE 0884-5) available with option 1
• CQC
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.