DESCRIPTION
The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors.
These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC.
The ILD621/ILQ621GB is well suited for CMOS interfacing given the CTRCEsat of 30 % minimum at IF of 1.0 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTRCE 50 % minimum at 5.0 mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.
FEATURES
• Alternate source to TLP621-2/-4 and TLP621GB-2/-4
• High collector emitter voltage, BVCEO = 70 V
• Dual and quad packages feature:
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage, 5300 VRMS
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.