DESCRIPTION
The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.
AGENCY APPROVALS
• UL 1577
• cUL 1577
• DIN EN 60747-5-5 (VDE 0884-5)
• BSI: EN 62368-1:2014
• CQC GB4943.1-2011
• CQC GB8898-2011
FEATURES
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 7 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL 94 V-0
• Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664)
• Climatic classification 55 / 100 / 21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak
• Creepage current resistance according to VDE 0303 / IEC 60112 comparative tracking index: CTI ≥ 175
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.