The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage(AC: 5kVRMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting of TLP785.
• TLP785: 7.62mm pitch type DIP4
• TLP785F: 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 5000Vrms (min)
• UL approved: UL1577, file No. E67349
• BSI under application: BS EN60065:2002
BS EN60950-1:2006
• SEMKO under application:EN60065:2002
EN60950-1:2001, EN60335-1:2002
• Option(D4)type
VDE approved: DIN EN60747-5-2
(Note): When an EN60747-5-2 approved type is needed,Please designate “Option (D4)”
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Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
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