The Toshiba TLP291-4 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291-4 is housed in the SO16 package, very small and thin coupler.
Since TLP291-4 are guaranteed wide operating temperature (Ta=-55 to 110˚C), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.
● Collector-Emitter Voltage : 80 V (min)
● Current Transfer Ratio : 50% (min)
Rank GB : 100% (min)
● Isolation Voltage : 2500 Vrms (min)
● Guaranteed performance over -55 to 110 ˚C
● UL (under preparation) : UL1577 , File No. E67349
cUL (under preparation) : CSA Component Acceptance Service No.5A
● BSI (under prerapation) : BS EN 60065: 2002,
: BS EN 60950-1: 2006
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