TOSHIBA东芝 TLP2309光藕

1. Applications
• Transistor Inverters
• Switching Power Supplies
• High-Speed Digital Interfacing

2. General
The Toshiba TLP2309 consists of a high-output GaAℓAs light-emitting diode coupled with a high-speed photodiode-transistor chip. It is housed in the SO6 package.The TLP2309 guarantees operation at up to 110 and on supplies both 3.3 V and 5 V. Also, since the TLP2309 guarantees a creepage / clearance distance
≥ 5.0 mm and internal isolation thickness ≥ 0.4 mm, this product is in the reinforced insulation class according to international safety standards.

3. Features
(1) Inverter logic type (open collector output)
(2) Package: SO6
(3) Operating temperature: -40 to 110
(4) Supply voltage: 3.3 V / 5 V
(5) Data transfer rate: 1 Mbit/s (typ.) (NRZ)
(6) Common-mode transient immunity: 15 kV/µs (min)
(7) Isolation voltage: 3750 Vrms (min)
(8) Safety standards
     UL-approved: UL1577, File No.E67349
     cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
     VDE-approved: EN60747-5-5 (Note 1)
     CQC-approved: GB4943.1, GB8898 Thailand Factory

 

 

 

 

 

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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