DESCRIPTION
The VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor.
DESCRIPTION
The SFH615A feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.
DESCRIPTION
The VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor.
DESCRIPTION
The VO610A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.
DESCRIPTION
The VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor.
DESCRIPTION
The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.
DESCRIPTION
The VOL617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package.
Description
The LTV-200/205/206/207/208 are consist of a high efficient Gallium Arsenide Infrared LED and a Silicon NPN phototransistor. This design provides excellent isolation between the input and output sides of the Optocoupler.
DESCRIPTION
The VOL618A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package.
Description
The LTV-200/205/206/207/208 are consist of a high efficient Gallium Arsenide Infrared LED and a Silicon NPN phototransistor. This design provides excellent isolation between the input and output sides of the Optocoupler.
DESCRIPTION
The TCMT410. series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 16 pin (quad channel) package.
Description
The LTV-200/205/206/207/208 are consist of a high efficient Gallium Arsenide Infrared LED and a Silicon NPN phototransistor. This design provides excellent isolation between the input and output sides of the Optocoupler.
DESCRIPTION
The ILD621/ILQ621 and ILD621GB/ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors.
Description
The LTV-200/205/206/207/208 are consist of a high efficient Gallium Arsenide Infrared LED and a Silicon NPN phototransistor. This design provides excellent isolation between the input and output sides of the Optocoupler.
DESCRIPTION
The ILD615, ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRED emitters and high gain NPN phototransistors.
Description
The LTV-200/205/206/207/208 are consist of a high efficient Gallium Arsenide Infrared LED and a Silicon NPN phototransistor. This design provides excellent isolation between the input and output sides of the Optocoupler.
DESCRIPTION
The ILD615, ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRED emitters and high gain NPN phototransistors.
Features
● Current transfer ratio ( CTR : MIN. 50% at IF= 5mA, VCE= 5V, Ta=25℃)
● High input-output isolation voltage ( Viso = 5,000Vrms )
DESCRIPTION
The 110 °C rated SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter,which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.
FEATURES
● Current transfer ratio(CTR: MIN 50% at IF=5mA, VCE=5V)
● Isolation voltage between input and output LTV-357T (Viso=3, 750Vrms)